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Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods

P. DURMUŞ1,* , Ş. ALTINDAL1, A. TATAROĞLU1

Affiliation

  1. Physics Department, Faculty of Arts and Science, Bozok University, 66100 Yozgat, Turkey

Abstract

The effect of interface state (Nss) and series resistance (Rs) on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si (111) (MIS) Schottky barrier diodes (SBDs) were carried out at 80, 200, 320 and 400 K. The energy distribution profile of Nss was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Φe) for each temperature. Experimental results show that the value of barrier height (ΦBo) decreases and ideality factor (n) increases with a decrease in temperature. The values of barrier height and Nss are also obtained from I-V and C-2-V characteristics and these two different methods are compared. The high value of n was attributed to the presence of a native insulator layer at metal/semiconductor (M/S) interface and the high value of Nss localized at Si/SiO2 interface, changing from the ∼1x1014cm-2eV-1 (at 80 K) to ∼5x1013 cm-2eV-1(at 400 K)..

Keywords

Au-/n-Si(111) SBDs; I-V-T and C-V-T caharacteristics; Interface states; Series resistance; Norde function.

Submitted at: May 17, 2010
Accepted at: July 14, 2010

Citation

P. DURMUŞ, Ş. ALTINDAL, A. TATAROĞLU, Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1472-1478 (2010)