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SADOON FARRUKH1, NAVEED AFZAL1,* , ANAS A. AHMED2, MOHSIN RAFIQUE1, MUHAMMAD AKRAM RAZA3
- Centre for Advanced Studies in Physics, GC University, Lahore, Pakistan
- School of Physics, Universiti Sains, Malaysia, Malaysia
- Centre of Excellence in Solid State Physics, University of the Punjab, Lahore, Pakistan
Copper Oxide film of monoclinic phase was deposited on silicon substrate by DC magnetron sputtering. A metal-semiconductor-metal (MSM) photodetector was fabricated by developing two interdigitated Ni electrodes on the film. The current-voltage characteristics of Ni/CuO/Ni device revealed Schottky contact formation which was attributed to Fermi-level pinning at the metal-semiconductor interface. The photo-response of the device was recorded by exposing it to the light of different wavelengths (850, 505, 405 and 365 nm). The results showed a significant increase in current under 505 nm light exposure. The Schottky barrier height was reduced after exposing the device to light..
Copper oxide, MSM photodiode, Sensitivity, Response time.
Submitted at: March 17, 2021
Accepted at: Nov. 24, 2021
SADOON FARRUKH, NAVEED AFZAL, ANAS A. AHMED, MOHSIN RAFIQUE, MUHAMMAD AKRAM RAZA, Fabrication and characterization of MSM photodetector based on DC sputtered CuO film, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 11-12, pp. 530-537 (2021)
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