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Fabrication and characterization of photodetector based on tellurium oxide thin film

G. AKRAM1,* , S. KADHIM1, H. ABDULLAH1,*

Affiliation

  1. Laser and Optoelectronics Engineering Department, University of Technology-Iraq, Baghdad, Iraq

Abstract

For the fabrication of the inorganic TeO2/Si heterojunction, thermal vapor deposition was employed. By varying the annealing temperature to 100°C, 125°C, 150°C, and 175°C, the optoelectronic properties of the photodetector were studied. The heterojunctions annealed at 175 °C exhibited outstanding performance, including a notable quantum efficiency value of 74.747% with an applied reverse bias of (−2 V), and an outstanding detectivity of (2.502x1011cm.Hz 1/2.W-1). TeO2 nanoscale thin films manufactured by a vacuum deposition approach demonstrated high durability. The (I–V) characteristics of the TeO2/Si heterojunction were verified in the dark and at room temperature..

Keywords

Photodetector, TeO2, Nanoparticles, Electrical properties.

Submitted at: Dec. 9, 2022
Accepted at: June 9, 2023

Citation

G. AKRAM, S. KADHIM, H. ABDULLAH, Fabrication and characterization of photodetector based on tellurium oxide thin film, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 5-6, pp. 258-262 (2023)