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Fabrication of antireflective silicon nanowires array

WENJUN SHENG1, TIELIN SHI1, ZHENGCHUN PENG2, BO SUN1, GUANGLAN LIAO1,*

Affiliation

  1. State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  2. Technology Manufacturing Group, Intel Corporation, 2501 NW 229th Ave, Hillsboro, OR 97124, USA

Abstract

In this work, vertical aligned SiNWs array have been fabricated on silicon wafers via metal assisted chemical etching method. This method mainly contains four fabrication steps: wafer cleaning, oxide layer removal, silver catalyst deposition and metal assisted etching. The relationship between the etching time and nanowires length is investigated, and the nanowires can be fabricated in a controllable manner. The optical characteristic of the nanowires array is measured. The average optical reflectance of the SiNWs array is as low as about 3.28% when the etching time is 20 min, implying such prepared SiNWs array possesses an excellent antireflective property. The successful transfer of the SiNWs array from the rigid silicon substrate onto a flexible PDMS film demonstrates its potential in fabricating flexible optoelectronic devices..

Keywords

Silicon nanowire, Metal assisted chemical etching, Light absorption, Transfer.

Submitted at: Sept. 11, 2012
Accepted at: April 11, 2013

Citation

WENJUN SHENG, TIELIN SHI, ZHENGCHUN PENG, BO SUN, GUANGLAN LIAO, Fabrication of antireflective silicon nanowires array, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 3-4, pp. 133-138 (2013)