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Fabrication of heterojunctions and current-voltage characteristics of vanadium coordination compounds

MOHAMMAD MAHROOF-TAHIR1,* , KHASAN S. KARIMOV2

Affiliation

  1. Saint Cloud State University, 720 Fourth Avenue South, Saint Cloud, MN 56301-4498, United States of America
  2. Physical Technical Institute, Academy of Sciences, Rudaki St.33, Dushanbe, 734025, Tajikistan

Abstract

Current voltage (I-V) characteristics of the films of four vanadium complexes, VO2(3-fl) (1) (3-fl = 3-Hydroxyflavone), VO(pbd)2 (pbd = 1-Phenyl-1,3-butadione) (2), VO(dbm)2 (dbm = Dibenzoylmethane) (3), and VO(acac)2 (acac = Acetylacetonate) (4), have been investigated at room temperature. The films were grown on copper (Cu) and Aluminum (Al) substrates by using a centrifugal machine operated at 183, 733 and 1650 g values. I-V characteristics of all samples showed non-linear rectification behavior. All complexes exhibited higher conductivity for Cu than Al substrate indicating that Cu and V complex contact resistance is lower than that of Al. Press tablets of the samples exhibited p-type semiconductor behavior. In 1 and 4, a switching effect from low conductance to high conductance states was observed. An abrupt increase in the current at threshold voltage may be related to switching effect from low to high conductivity state. At relatively low current the switching effect was reversible for both substrates, whereas at high current it was only reversible for Al. Heterojuction samples of Cu/1/TiO2/Ga and Al/4/TiO2/Ga (TiO2 = titanium oxide) were also fabricated and they were found to be p-n aniso type..

Keywords

Centrifugation, Current-voltage characteristics, Vanadium complex, Titanium dioxide, Thin film, Flavonoids, β-diketonate.

Submitted at: Sept. 25, 2008
Accepted at: Jan. 29, 2009

Citation

MOHAMMAD MAHROOF-TAHIR, KHASAN S. KARIMOV, Fabrication of heterojunctions and current-voltage characteristics of vanadium coordination compounds, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 1, pp. 83-88 (2009)