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ABUL HOSSION1,* , SANCHIT KHATAVKAR2,* , BRIJ MOHANARORA3,*
- Department of Physics, BSMR Maritime University, Dhaka 1216, Bangladesh
- Department of Energy and Power Electronics, Vellore Institute of Technology, Vellore -632014, Tamil Nadu, India
- Department of Physics, University of Mumbai, Mumbai 400098, India
The hetero junction with intrinsic thin layer technique shows promising advancement in the development of optoelectronics devices. In this article, we have described the fabrication and characterization of n-i-p structure hetero junction with intrinsic silicon thin layer diode on glass substrate using hot wire chemical vapour deposition technique. We have grown the device structure starting from bottom i) n-type microcrystalline silicon layer on fluorinedopedtin oxide coated glass at 350C substrate temperature, ii) intrinsic polycrystalline silicon layer at 600C substrate temperature, iii) hydrogenated amorphous intrinsic silicon layer (a-Si:H) at 200C substrate temperature and iv) p type amorphous silicon layer at 200C substrate temperature on the top. FTO and aluminium wereused as back and top contactsrespectively. From dark current-voltage and capacitance-voltage measurement,we observed that the device haddiode-like characteristics. However, further optimization of the device is needed for successful application in sensors, detectors and photovoltaic applications..
Nip diode, HIT, Photo sensor, Pn junction, HWCVD.
Submitted at: April 6, 2020
Accepted at: April 8, 2021
ABUL HOSSION, SANCHIT KHATAVKAR, BRIJ MOHANARORA, Fabrication of n-i-p diode using hot wire chemical vapor deposition technique, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 3-4, pp. 145-149 (2021)
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