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Fabrication of submicrometer periodic structures using interference lithography and two-layer chalcogenide photoresist

I. Z. INDUTNYI1,* , M. POPESCU2, A. LORINCZI2, F. SAVA2, V. I. MIN’KO1, P. E. SHEPELIAVYI1, V. A. DAN’KO1

Affiliation

  1. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
  2. a National Institute of Material Physics, 105 bis Atomistilor st., 077125 Magurele, Romania

Abstract

Technological process of interference lithography using two-layer chalcogenide photoresist were investigated. Top As40S30Se30 layer is photoresist with a high selectivity and can be used for recording of interference pattern and formation of first lithographic mask. Second, more thick As4Ge30S66 layer, almost is not sensitive to light, but dissolves in weak (0.05 %) water solution of KOH. That, optimizing the etchant solutions for both layers, exposure and time of etching it is possible to carry out the technological process of formation of the lithographic mask with high modulation and with the groove form close to rectangular. This technology has been used for the fabrication of one- and two-dimensional periodic structures. Using two-layer As40S30Se30-As4Ge30S66 photoresist, we have fabricated the diffraction gratings and two-dimensional periodic structures with elements of submicron size. Relief parameters and diffractions properties of the obtained structures and their dependence on etching time are studied..

Keywords

Chalcogenide inorganic photoresist, Interference lithography.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

I. Z. INDUTNYI, M. POPESCU, A. LORINCZI, F. SAVA, V. I. MIN’KO, P. E. SHEPELIAVYI, V. A. DAN’KO, Fabrication of submicrometer periodic structures using interference lithography and two-layer chalcogenide photoresist, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1967-1971 (2009)