"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

XUELI DU1,2,* , YUE SUN1, QIAN WANG1, NAN MA1, ZHIHAO YUAN1,3

Affiliation

  1. School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China
  2. Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin 300384, China
  3. Key Laboratory of Display Materials & Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384, China

Abstract

The arrayed ZnO p-n nano-junctions were fabricated with n-type ZnO nano-granular film (with the particle size about 30 nm) and p-type ZnO nano-rods (with the diameter around 100 nm) through a simple chemical synthesis method without special devices and complex doping processing. I-V curve of the p-n nano-junction shows an obvious rectifying behavior with a threshold voltage of about 3.0 V, which presents typical electrical property of a diode. Electroluminescence shows deep-level related blue band (456nm) emission at room temperature..

Keywords

ZnO; p-n nano-junction, Electroluminescence (EL).

Submitted at: April 11, 2011
Accepted at: June 9, 2011

Citation

XUELI DU, YUE SUN, QIAN WANG, NAN MA, ZHIHAO YUAN, Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 6, pp. 631-634 (2011)