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Far infrared study of some rare earth impurities in crystals of Pb1-xSnx alloys

P. M. NIKOLIC1, K. M. PARASKEVOPOULOS2, M. V. NIKOLIC3, B. STAMENOVIC1, T. T. ZORBA2, S. S. VUJATOVIC1, V. BLAGOJEVIC4, A. BOJCIC1

Affiliation

  1. Institute of Technical Sciences of SASA, Belgrade, Knez Mihajlova 35/IV, 11000 Beograd, Serbia
  2. Physics Department, Solid State Section, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
  3. Institute for Multidisciplinary Research, Kneza Viseslava 1, 11000 Belgrade, Serbia
  4. Faculty of Electronic Engineering, University of Belgrade, Kralja Aleksandra 73, 11000 Belgrade, Serbia

Abstract

Single crystal samples of Pb0.9Sn0.1Te doped with Yb, Sm or Gd were produced using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for highly polished samples with various impurity concentration (between 0.2 at% and 1 at %). The experimental diagrams were numerically analyzed using a fitting procedure based on the plasma-phonon interaction model and the optical parameters were determined. The application of lead- tin tellurides doped with rare earth elements for infrared astronomy has been discussed..

Keywords

Semiconductors, Far infrared spectroscopy, Rare earth elements.

Submitted at: Feb. 5, 2009
Accepted at: April 28, 2009

Citation

P. M. NIKOLIC, K. M. PARASKEVOPOULOS, M. V. NIKOLIC, B. STAMENOVIC, T. T. ZORBA, S. S. VUJATOVIC, V. BLAGOJEVIC, A. BOJCIC, Far infrared study of some rare earth impurities in crystals of Pb1-xSnx alloys, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 457-460 (2009)