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FeIn2Se4 layered magnetic semiconductor and heterojunction on its base

Z. D. KOVALYUK1,* , V. A. ZASLONKIN1, V. M. KATERYNCHUK1, V. V. NETYAGA1, A. V. KONSTANTINOVICH1

Affiliation

  1. Chernivtsi Department of the I.M. Frantsevych Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, 5, Iryna Vilde St., 58001, Chernivtsi, Ukraine

Abstract

FeIn2Se4 crystals, having the layered structure and a magnetic component, have been grown by the Bridgman method. NInSe- p-FeIn2Se4 heterojunctions were produced on it base. A value of the potential barrier of heterojunctions was determined from the capacitance-voltage characteristics. Current-voltage characteristics and the temperature dependences of the forward branches of the current-voltage characteristics were measured too. A diode coefficient of the current-voltage characteristics is determined. A series resistance of heterojunctions determines a frequency dependence of the capacitance-voltage characteristics and decreases an exponential growth of the current with the voltage. The photoresponse spectra of heterojunctions have only the long-wave threshold at 1.25 eV and extend in an ultraviolet range with the increasing of the photocurrent quantum efficiency..

Keywords

FeIn2Se4, InSe, Heterojunction, Photoelectric parameters.

Submitted at: Sept. 25, 2007
Accepted at: Feb. 18, 2008

Citation

Z. D. KOVALYUK, V. A. ZASLONKIN, V. M. KATERYNCHUK, V. V. NETYAGA, A. V. KONSTANTINOVICH, FeIn2Se4 layered magnetic semiconductor and heterojunction on its base, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 2, pp. 277-279 (2008)