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Femtosecond laser ablation of indium phosphide in air: dynamical, structural and morphological evolution

J. BONSE1,2,3,* , G. BACHELIER4, S.M. WIGGINS5, J. SIEGEL2, J. SOLIS2, J. KRÜGER1, H. STURM1

Affiliation

  1. BAM Bundesanstalt für Materialforschung und -prüfung, Unter den Eichen 87, D-12205 Berlin, Germany
  2. Laser Processing Group, Instituto de Optica, C.S.I.C., Serrano 121, E-28006 Madrid, Spain
  3. Max-Born-Institut, Max-Born-Strasse 2A, D-12489 Berlin, Germany
  4. Laboratoire de spectrométrie ionique et moléculaire, Université Lyon 1 – CNRS (UMR 5579), 43 Boulevard du 11 Novembre 1918, F-69622 Villeurbanne Cedex, France
  5. SUPA, Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom

Abstract

The irradiation of single-crystalline indium phosphide (c-InP) by Ti:sapphire femtosecond laser pulses (130 fs, 800 nm) in air is studied by means of in-situ time resolved reflectivity measurements [fs-time-resolved microscopy (100 fs-10 ns) and point probing analysis (ns - µs)] and by complementary ex-situ surface analytical methods (Micro Raman Spectroscopy, Scanning Force, and Optical Microscopy). The dynamics of melting, ablation, and optical breakdown as well as structural changes resulting from rapid solidification are investigated in detail. Different laser-induced surface morphologies are characterized and discussed on the basis of recent ablation and optical breakdown models..

Keywords

Femtosecond laser ablation, Optical breakdown, Time-resolved measurements, Semiconductor, Indium phosphide.

Submitted at: June 18, 2009
Accepted at: Feb. 27, 2010

Citation

J. BONSE, G. BACHELIER, S.M. WIGGINS, J. SIEGEL, J. SOLIS, J. KRÜGER, H. STURM, Femtosecond laser ablation of indium phosphide in air: dynamical, structural and morphological evolution, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 421-426 (2010)