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Formation mechanism of metal nanodots induced by remote plasma exposure

KATSUNORI MAKIHARA1,* , KAZUHIRO SHIMANOE1, AKIRA KAWANAMI1, MITSUHISA IKEDA1, SEIICHIRO HIGASHI,1, SEIICHI MIYAZAKI1

Affiliation

  1. Graduate School of Advanced Sciences of Matter, Hiroshima University Kagamiyama 1-3-1, Higashi-Hiroshima, 739-8530, Japan

Abstract

We have demonstrated formation of Pt nanodots by remote H2, He or Ar plasma treatments of ultrathin Pt films deposited on SiO2 and studied the effect of remote H2 plasma on the Pt nanodot formation in comparison with the results obtained with rare gas plasmas. The surface migration of Pt atoms induced by remote H2 plasma is suppressed with Ar or He dilution. By exposing the Pt foil to remote plasma of pure H2, the surface temperature was increased up to ~500 ˚C. The migration of Pt atoms is driven by local heating caused by the efficient recombination of atomic hydrogen on pure Pt surface..

Keywords

Nanodots, Platinum dots, Remote H2 plasma, Floating gate memory.

Submitted at: June 20, 2009
Accepted at: Feb. 27, 2010

Citation

KATSUNORI MAKIHARA, KAZUHIRO SHIMANOE, AKIRA KAWANAMI, MITSUHISA IKEDA, SEIICHIRO HIGASHI,, SEIICHI MIYAZAKI, Formation mechanism of metal nanodots induced by remote plasma exposure, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 626-630 (2010)