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A. TATAROĞLU1,* , AHMED A. AL-GHAMDİ2, F. YAKUPHANOGLU3
- Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey
- Department of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia
- Department of Physics, Faculty of Science, Fırat University, Elazığ, Turkey
In this study, the frequency dependence of dielectric parameters of Bi3.25La0.75Ti3O12 (BLT) thin film prepared on Al-coated p-type silicon substrate by sol-gel method were investigated using admittance (Y=G+iωC) measurements. These measurements were carried out in the frequency range of 10 kHz-1 MHz. The frequency dependence of the capacitance (C) and conductance (G/ω) indicates the existence of interface states. Dielectric constant (ε'), loss (ε'') and loss tangent (tan δ), ac conductivity (σac) and complex electric modulus (M* ) values were calculated from impedance measurements. It has been found that the ε' and ε'' decrease while the σac increases with the increasing frequency. Experimental results show that the values of dielectric parameters are a strong function of frequency..
Bi3.25La0.75Ti3O12 (BLT) thin film; Dielectric parameters; Frequency dependence.
Submitted at: May 4, 2016
Accepted at: Oct. 10, 2017
A. TATAROĞLU, AHMED A. AL-GHAMDİ, F. YAKUPHANOGLU, Frequency dependence of dielectric parameters of structure with Bi3.25La0.75Ti3O12 thin film prepared by sol-gel method, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 9-10, pp. 629-633 (2017)
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