Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Gain switching characteristics of InAs-InP(113)B quantum dot laser



  1. Department of Electrical and Electronics, University of Gaziantep, 27310 Gaziantep, Turkey


In this study, gain switching characteristic of quantum dot (QD) lasers is described by using rate equations. The effect of some laser diode parameters on the output pulse of gain switching is investigated. The numerical results indicate that carrier recombination time in QD and spontaneous coupling factor strongly affect the system operation, whereas there is no significant effect of gain compression factor or of the carrier recombination in the wetting layer or of the carrier emission from the QD to the wetting layer or of the relaxation time from the wetting layer to the QD..


Quantum Dot (QD) laser, Gain switching.

Submitted at: Feb. 12, 2016
Accepted at: Feb. 10, 2017


MEHMET MERKEPÇİ, Gain switching characteristics of InAs-InP(113)B quantum dot laser, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 1-2, pp. 1-5 (2017)