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- Department of Electrical and Electronics, University of Gaziantep, 27310 Gaziantep, Turkey
In this study, gain switching characteristic of quantum dot (QD) lasers is described by using rate equations. The effect of some laser diode parameters on the output pulse of gain switching is investigated. The numerical results indicate that carrier recombination time in QD and spontaneous coupling factor strongly affect the system operation, whereas there is no significant effect of gain compression factor or of the carrier recombination in the wetting layer or of the carrier emission from the QD to the wetting layer or of the relaxation time from the wetting layer to the QD..
Quantum Dot (QD) laser, Gain switching.
Submitted at: Feb. 12, 2016
Accepted at: Feb. 10, 2017
MEHMET MERKEPÇİ, Gain switching characteristics of InAs-InP(113)B quantum dot laser, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 1-2, pp. 1-5 (2017)
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