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Gallium concentration effects on the properties of CuIn1-xGaxSe2 ingots

S. GAGUI1,* , B. HADJOUDJA1, B. CHOUIAL1, B. ZAIDI1, Y. KOUHLANE1, N. BENSLIM2, A. CHIBANIa1

Affiliation

  1. Laboratory of Semiconductors, Department of physics, University Badji Mokhtar, Annaba, Algeria
  2. Laboratory of Study of Surfaces and Interfaces of Solid Matter, Department of physics, University Badji Mokhtar, Annaba, Algeria

Abstract

In this paper, we report on the crystal growth of CuIn1-xGaxSe2 ingots with different gallium concentrations (0 ≤ x ≤ 1), and investigate the influence of these concentrations on the structural, optical and electrical properties of these compounds. The preferred orientation in the (112) direction was obtained, and the main XRD peaks showed a noticeable shift to higher diffraction angles with increasing Ga content. The lattice parameters “a” and “c” have been calculated from the X-ray spectra and were found to decrease with the increase of gallium concentration. In addition the c/a ratio was found to be close to 2. The band gap Eg increased when the Ga/(In+Ga) ratios increased. The ingots have p-type conductivity and their resistivity varied between 6.41 and 32.64 Ωcm with a minimum value of 0.67 Ωcm for x=0.4..

Keywords

CuIn1-xGaxSe2, Ingots, Gallium grading, Optical properties.

Submitted at: March 12, 2015
Accepted at: May 7, 2015

Citation

S. GAGUI, B. HADJOUDJA, B. CHOUIAL, B. ZAIDI, Y. KOUHLANE, N. BENSLIM, A. CHIBANIa, Gallium concentration effects on the properties of CuIn1-xGaxSe2 ingots, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 5-6, pp. 670-674 (2015)