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Gap state spectroscopy in Se-based amorphous semiconductors

V. I. MIKLA1,* , V. V. MIKLA2

Affiliation

  1. Institute for Solid State Physics and Chemistry, Uzhgorod National University, 88000 Uzhgorod, Voloshina 54, Ukraine
  2. Yazaki, Ukraine, Ltd

Abstract

Thermally stimulated depolarization currents (TSDC) trap level spectroscopic technique is considered for studying of the corresponding defect states in the mobility gap in high-resistance amorphous Se-based semiconductors..

Keywords

Amorphous semiconductors, Trap level spectroscopy, Thermo-stimulated depolarization.

Submitted at: Feb. 15, 2008
Accepted at: March 17, 2008

Citation

V. I. MIKLA, V. V. MIKLA, Gap state spectroscopy in Se-based amorphous semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 3, pp. 484-491 (2008)