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Growth and spectroscopic characterization of a new 6.2 at.% Yb-doped LGSB crystal

M. GRECULEASA1, F. VOICU1, S. HAU1, C. GHEORGHE1, L. GHEORGHE1,*

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, Laboratory of Solid-State Quantum Electronics, Magurele, 077125, Ilfov, Romania

Abstract

A high-quality Yb:LGSB crystal was successfully grown by the Czochralski method from the starting melt composition La₀.₆₇₈Yb₀.₀₈Gd₀.₄₉₂Sc₂.₇₅(BO₃)₄. The chemical composition of the Yb:LGSB grown crystal was calculated to be La₀.₆₈₂Yb₀.₀₆₂ Gd₀.₃₇₄Sc₂.₈₈₂(BO₃)₄, corresponding to a Yb3+ concentration of 6.2 at.%. The XRPD spectrum revealed the existence of a single trigonal phase (space group R32) and the unit cell parameters were determined to be a= 9.798(1) Å and c= 7.961(2) Å. The spectroscopic investigations indicate that laser emission in the ~1.03 μm range can be successfully generated by the 6.2 at% Yb:LGSB crystal..

Keywords

Crystal, Laser, Czochralski.

Submitted at: Nov. 15, 2024
Accepted at: Dec. 2, 2024

Citation

M. GRECULEASA, F. VOICU, S. HAU, C. GHEORGHE, L. GHEORGHE, Growth and spectroscopic characterization of a new 6.2 at.% Yb-doped LGSB crystal, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 11-12, pp. 475-479 (2024)