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Growth of CdZnTe single crystals by seed travelling heater method

XIAO GAO1, DONGXIAO TENG1, JUNCHENG LIU1,2,* , SHENQIU ZHAI3

Affiliation

  1. School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China
  2. School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, China
  3. School of Mechanical Engineering, Shandong University of Technology, Zibo 255049, China

Abstract

Cadmium zinc telluride crystal has attracted more and more attention due to its wide application in the areas of nuclear radiation detection, infrared detection, and high energy physics and so on. And it has been used for the epitaxial substrate of HgCdTe detectors with high performance whereby the molar ratio of Cd:Zn:Te is 0.96:0.04:1, particularly. At present, CdZnTe crystals are usually grown by Bridgman method, which often causes some problems, such as large Cd vacancy defects and high dislocation density. CdZnTe crystals with the dimensions of Φ39 mm×65 mm were grown by travelling heater method with seed crystal. The morphology of Te inclusions, as well as the dislocation density of the crystal was investigated. The infrared transmittance of the crystal was measured. The dislocation density was 6.49×105 cm-2 . Pentagonal Te inclusions or hexagonal Te inclusions were the main defects in the CdZnTe crystals..

Keywords

Cadmium zinc telluride crystal, Seed travelling heater method, Seed crystal, Infrared transmittance, Dislocation densi.

Submitted at: Nov. 28, 2017
Accepted at: June 14, 2019

Citation

XIAO GAO, DONGXIAO TENG, JUNCHENG LIU, SHENQIU ZHAI, Growth of CdZnTe single crystals by seed travelling heater method, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 5-6, pp. 395-400 (2019)