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Growth of funnel-shaped GaN nanowire by switching the growth mode between VLS/VS

Y. ZHANG1,* , Y. ZONG2,* , J. HUANG1, W. L. LIU3

Affiliation

  1. School of Intelligent and Electronic Engineering, Dalian Neusoft University of Information, Dalian 116000, China
  2. School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110000, China
  3. School of College of Health and Medical Technology, Dalian Neusoft University of Information, Dalian 116000, China

Abstract

Funnel-shaped GaN nanowire(NW) was grown on GaN(0001) coated sapphire substrate with Ni/Au catalyst by using MOCVD. The catalyst thickness and III-V ratio were investigated to control the NW growth mode. By changing the catalyst thickness to tuning the catalyst droplet surface energy, and the III-V ratio to form different chemical potential of the gaseous reactants, the NW growth mode can vary between VLS and VS. Funnel-shaped GaN NW was obtained through VLS/VS mixed growth mode by using a two-step growth method..

Keywords

GaN nanowire, Funnel-shaped, VL/VLS mix mode, Catalyst, III-V ratio.

Submitted at: May 29, 2024
Accepted at: Dec. 2, 2024

Citation

Y. ZHANG, Y. ZONG, J. HUANG, W. L. LIU, Growth of funnel-shaped GaN nanowire by switching the growth mode between VLS/VS, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 11-12, pp. 480-489 (2024)