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Growth of III-nitrides on Si(111) BY RF-MBE and its application to MSM photodiodes

L. S. CHUAH1,* , Z. HASSAN1, H. ABU HASSAN1, F. K. YAM1, C. W. CHIN1, N. M. AHMED2

Affiliation

  1. School of Physics, Universiti Sains Malaysia, 11800, Penang, Malaysia
  2. School of Microelectronic Engineering, University Malaysia Perlis, 02600, Perlis Malaysia

Abstract

In this paper, we investigated growth of GaN and Al0.09Ga0.91N epilayer grown on silicon (111) by using II MBE system. The major characterization tools used for this study were high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and micro photoluminescence (PL) spectroscopy. Also reported is our attempt to fabricate and characterize metalsemiconductor- metal photodiode based on these films. The responsivity as a function of wavelength for an MSM GaN/Si(111) detector is a sharp cut-off wavelength at 362 nm. A maximum responsivity of 0.256 A/W was achieved at 358 nm. For Al0.09Ga0.91N film, there is a sharp cut-off wavelength at 340 nm. A maximum responsivity of 0.263 A/W was achieved at 338 nm. In UV spectral region, the detector shows a little decrease from 340 to 200 nm. The responsivity of the MSM drops by nearly an order of magnitude across the cut-off wavelength..

Keywords

GaN, Al-Ga-N, Photodiode, XRD, Photoluminescence, AFM.

Submitted at: Nov. 3, 2007
Accepted at: March 17, 2008

Citation

L. S. CHUAH, Z. HASSAN, H. ABU HASSAN, F. K. YAM, C. W. CHIN, N. M. AHMED, Growth of III-nitrides on Si(111) BY RF-MBE and its application to MSM photodiodes, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 3, pp. 569-572 (2008)