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High optical absorber of WS2/MoS2 Si-based in broadband spectrum

XICHENG XIONG1,* , CHUN JIANG2, QUAN XIE3, QUANZHEN HUANG1, XINGHUI WU1, YUBI ZHANG1

Affiliation

  1. School of Electrical and Information Engineering, Henan University of Engineering, Zhengzhou 451191, China
  2. State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China
  3. School of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

Abstract

In this paper, the authors present the design of three distinct simple structures: Si, MoS2/Si, and WS2/MoS2/Si film. The objective is to analyze their optical transmission properties across a broadband range. The findings reveal that the absorptivity of WS2/MoS2/Si was exceptional, exhibiting an expanded band range and increased value. These results suggest that this structure holds great potential for application in various photodevices. Such characteristics are highly advantageous for the design and fabrication of optical and photoelectric devices..

Keywords

WS2, MoS2, Si, Optical property, Absorber.

Submitted at: Oct. 28, 2024
Accepted at: Aug. 5, 2025

Citation

XICHENG XIONG, CHUN JIANG, QUAN XIE, QUANZHEN HUANG, XINGHUI WU, YUBI ZHANG, High optical absorber of WS2/MoS2 Si-based in broadband spectrum, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 7-8, pp. 297-302 (2025)