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SAMADRITA DAS1, TRUPTI RANJAN LENKA1,* , FAZAL AHMED TALUKDAR1, GIOVANNI CRUPI2, HIEU PHAM TRUNG NGUYEN3
- Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India
- BIOMORF Department, University of Messina, Messina 98125, Italy
- Department of Electrical and Computer Engineering, Texas Tech University, 1012 Boston Avenue, Lubbock, Texas 79409, USA
In this paper, we propose a novel deep ultra-violet (DUV) AlGaN/GaN multi-quantum well light-emitting diode (LED) with a step-graded n-type AlInGaN electron blocking layer (EBL) instead of a conventional p-type AlGaN EBL. This is designed for a∼265 nm wavelength emission without affecting the hole injection efficiency. Due to enhanced carrier transport in the step-graded n-type EBL structure, there occurs reduced electron leakage into the p-region, superior hole activation and hole injection, improved output power and internal quantum efficiency (IQE). Moreover, this specially designed EBL reduces the quantum confined stark effect in the active region, ultimately enhancing the carrier wave functions overlap. The device structure is simulated using Atlas technology computer-aided design (TCAD). The internal quantum efficiency is improved from ~36.48% to ~49.46% while switching from conventional p-type EBL to step-graded n-type EBL. Furthermore, our proposed structure exhibits 1.61% efficiency droop, which is significantly ~4.8 times lower as compared to the regular structure..
Electron blocking layer (EBL), Internal quantum efficiency (IQE), Light-emitting diode (LED), Multi-quantum well (MQW), Ultra-violet (UV).
Submitted at: Jan. 11, 2023
Accepted at: Aug. 10, 2023
SAMADRITA DAS, TRUPTI RANJAN LENKA, FAZAL AHMED TALUKDAR, GIOVANNI CRUPI, HIEU PHAM TRUNG NGUYEN, High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 7-8, pp. 311-320 (2023)
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