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Hydrogenation and annealing studies on swift heavy ion (Au7+) irradiated Pd/p-Si devices

S. P. PANDEY1,* , B. BHATTACHARYA2, U.P. SINGH3, K. ASOKAN4

Affiliation

  1. Galgotia College of Engineering and Technology, Greater Noida (U.P). INDIA
  2. Hindustan College of Science and Technology, Farah, Mathura, INDIA
  3. KIIT University, Bhubaneshwar, INDIA
  4. IUAC (Nuclear Science Centre), Aruna Asaf Ali Marg, New Delhi, INDIA

Abstract

Electronic properties of the Pd/p-Si devices have been studied from J-V and C-V characteristics as a function of irradiation fluence, hydrogenation and annealing temperatures to understand the phenomenon of degradation of Pd/p-Si devices when exposed with swift heavy ions, 100 MeV Au(7+). It has been found that the diode characteristics of the devices become poor and show an increased resistivity after irradiation. The irradiated devices were hydrogenated with an aim to repair the irradiation damage. Annealing of these devices was carried out at temperatures ranging from 100°C to 400°C. The I-R spectroscopic studies on the irradiated and subsequently annealed devices show the presence of vacancies and their complexes with impurities like hydrogen, carbon and oxygen. The results have been discussed in the realm of radiation induced compensating defects causing the carrier removal phenomenon to increase the resistivity of the devices on irradiation..

Keywords

Pd/Si system, swift ion irradiation, hydrogenation, radiation induced defects.

Submitted at: Nov. 4, 2008
Accepted at: Feb. 24, 2009

Citation

S. P. PANDEY, B. BHATTACHARYA, U.P. SINGH, K. ASOKAN, Hydrogenation and annealing studies on swift heavy ion (Au7+) irradiated Pd/p-Si devices, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 2, pp. 186-191 (2009)