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Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure

M. CAVAS1, M. ENVER AYDIN2, A. A. AL-GHAMDI3, OMAR A. AL-HARTOMY3,4, FARID EL-TANTAWY5, F. YAKUPHANOGLU3,6,*

Affiliation

  1. Maden Higher Vocational School, FiratUniversity, Elazig, Turkey
  2. Physics Department, University of Dicle,21280, Diyarbakır, Turkey
  3. Department of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia
  4. Department of Physics, Faculty of Science, Tabuk University, Tabuk 71491, Saudia Arabia
  5. Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
  6. Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey

Abstract

The electrical and photovoltaic properties of metal/nanostructure CuPc phtalocynine organic layer /semiconductor diode have been investigated. The diode indicated a good rectifying behavior with non-linear behavior due to the organic and inorganic interfacial layers. The barrier height (0.77 eV) and ideality factor (1.99) of the studied diode is higher than that of conventional Al/p-Si Schottky diode. This indicates that barrier height could be increased by using CuPc phtalocynine organic layer on p-type silicon by changing the space charge region of p-type silicon. The photovoltaic parameters of the diode were found to be Voc=0.25 and Jsc=607.2 μA under AM1.5. The obtained results indicate that the barrier height of conventional Al/p-Si Schottky diode can be increased by organic modification and metal/nanostructure CuPc/semiconductor diode can be used for optoelectronic device applications as a photosensor..

Keywords

Organic-inorganic diodes, Photosensor, CuPc phtalocynine.

Submitted at: May 2, 2011
Accepted at: Sept. 20, 2012

Citation

M. CAVAS, M. ENVER AYDIN, A. A. AL-GHAMDI, OMAR A. AL-HARTOMY, FARID EL-TANTAWY, F. YAKUPHANOGLU, Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 9-10, pp. 798-803 (2012)