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Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure

M. SONG1, Z. WU1,2,* , Y. FANG3, R. XIANG1, Y. SUN1, H. WANG1, C. YU1, H. XIONG1, J. DAI1,2, C. CHEN1,2

Affiliation

  1. a Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  2. State Key Laboratory of Functional Materials for Informatics，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，865 Changning Road, Shanghai 200050, China
  3. Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

The performance of In0.65Ga0.35N single junction solar cell including an InGaN window layer with p-on-n and n-on-p two types of configurations has been theoretically investigated. By taking polarization effects into consideration, it is found that with the same dislocation density the n-on-p type cell has a very high conversion efficiency, while the energy conversion efficiency of the conventional p-on-n type cell is very low. The superior performance of the n-on-p type cell is due to a better carrier collection efficiency resulting from an improved band alignment at the interface between the In0.65Ga0.35N emitter layer and the InGaN window layer, as compared to the n-on-p structure. The effects of dislocation density on the n-on-p type In0.65Ga0.35N solar cell efficiency have been evaluated and are compared with the case of the GaAs solar cell, showing that the InGaN solar cell has a greater tolerance level to the dislocation density than GaAs solar cell, which is very similar to the case for the light-emitting diodes..

Keywords

InGaN; n-on-p structure; polarization effect; solar cell.

Submitted at: June 17, 2010
Accepted at: July 14, 2010

Citation

M. SONG, Z. WU, Y. FANG, R. XIANG, Y. SUN, H. WANG, C. YU, H. XIONG, J. DAI, C. CHEN, Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1452-1456 (2010)