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Influence of Bi doping on electrical and optical properties of phase change material Ge2Sb2Te5

P. LAZARENKO1, HUY PHUC NGUYEN2,3,* , S. KOZYUKHIN2, A. SHERCHENKOV1

Affiliation

  1. Moscow State Institute of Electronic Technology (Technical University), 124498 Zelenograd, Russia
  2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Pr., 31, Moscow, 119991, Russia
  3. Moscow State Pedagogical University, M. Pirogovskaya St, 1, Moscow, 119991, Russia

Abstract

In this paper, we studied the electrical and optical properties of Ge2Sb2Te5 thin films and the influence of Bi impurity on the key parameters of phase change cell operation – resistivity and optical constants (n, k). Bi was chosen as impurity due to its isomorphism with one of the main material component - Sb. The Bi doping led to the shift of phase transformation temperature to the lower one, which can be related to the modification of chemical bonding parameters. A decrease in activation energy of conductivity for amorphous thin films from 0.36 eV (Ge2Sb2Te5) to 0.22 eV (Bi0.14Ge2Sb2Te5) was observed. A regular decrease of refractive index (n) and a general increase in the extinction coefficient (k) with the increasing of Bi concentration was observed..

Keywords

Chalcogenide materials, Phase change memory, Doping, Ge2Sb2Te5, Ellipsometry.

Submitted at: Nov. 1, 2011
Accepted at: Nov. 23, 2011

Citation

P. LAZARENKO, HUY PHUC NGUYEN, S. KOZYUKHIN, A. SHERCHENKOV, Influence of Bi doping on electrical and optical properties of phase change material Ge2Sb2Te5, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1400-1404 (2011)