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Influence of defects on the switching speed of Ge2Sb2Te5

A. VELEA1,* , M. POPESCU1, A. LÖRINCZI1, F. SAVA1, I. D. SIMANDAN1, C. MIHAI2

Affiliation

  1. National Institute R&D of Materials Physics, Bucharest-Măgurele, P. O. Box MG.7, Romania
  2. Faculty of Physics, University of Bucharest, 405 Atomistilor str., P.O.Box MG-11, 077125, Măgurele-Ilfov, Romania

Abstract

Chalcogenide phase change materials are one of the major contenders for the new non-volatile memory applications. Here is reported that the switching speed of Ge2Sb2Te5 is strongly dependent on the percent of defects in the material. Using cellular automata simulations it was shown that the size of the percolation cluster is minimum, thus the switching speed is maximum, for a percent of around 25% defects in the material. This is a property of the Ge2Sb2Te5 that can be useful for new phase change materials and devices design with better switching properties..

Keywords

Chalcogenide, Phase change materials, Cellular automata, Switching speed, Defects.

Submitted at: Nov. 1, 2011
Accepted at: Nov. 23, 2011

Citation

A. VELEA, M. POPESCU, A. LÖRINCZI, F. SAVA, I. D. SIMANDAN, C. MIHAI, Influence of defects on the switching speed of Ge2Sb2Te5, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1594-1596 (2011)