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Influence of fluorine doping on spin-coated indium gallium zinc oxide (IGZO) thin film properties



  1. Higher Collage of Food Sciences and Agri-food Industries, El Harrach , Algiers, Algeria
  2. Laboratory of Metallic and Semiconducting Materials (LMSM), Mohammed Khider University, 07000 Biskra, Algeria


Amorphous Indium Gallium Zn-O (a-IGZO) is the most suitable channel material for thin-film transistors (TFTs). In this work, Fluorine (F) doped a-IGZO thin films were deposited on glass substrates using a facile spin-coating sol gel method. The effect of F doping on the structure, electrical and optical properties was investigated. X-ray diffraction (XRD) characterization shows that all deposited IGZO thin films have an amorphous structure and scanning electron microscope (SEM) showed smooth surfaces for all films. Resistivity measurement indicated that F doping systematically decreases the film sheet resistance to achieve while optical characterization show that the deposited thin films transmittance is slightly enhanced to about 85%. Energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL) show that F-doping affects the Oxygen vacancy. This latter decreases with increasing F doping. These findings indicate that doping by Fluorine can be a key factor for developing low cost and high performance IGZO TFTs..


a-IGZO, F doping, Spin coating, Structural characteristics, Optical characteristics, Electrical characteristics.

Submitted at: Aug. 16, 2023
Accepted at: April 10, 2024


MOHAMED LABED, NOUREDİNE SENGOUGA, AFAK MEFTAH, Influence of fluorine doping on spin-coated indium gallium zinc oxide (IGZO) thin film properties, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 3-4, pp. 143-148 (2024)