"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Influence of frequency on electrical and dielectric properties of Au/Si3N4/n-Si (MIS) structures

T. ATASEVEN1, A. TATAROĞLU1,* , T. MEMMEDLI1, S. ÖZÇELIK1

Affiliation

  1. Physics Department, Faculty of Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey

Abstract

In this study, we present a detailed investigation of the electrical and dielectric properties of the Au/Si3N4/n-Si (MIS) structures. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics have been measured in the frequency range of 1 kHz-1 MHz at room temperature. Calculation of the dielectric constant (ε ' ), dielectric loss (ε ''), loss tangent (tanδ), ac conductivity (σac) and complex electric modulus (M* ) are given in the studied frequency ranges. Experimental results show that the decrease of ε ' and ε '' with the increasing frequency are observed. In addition, the increase of σac with the increasing frequency is founded. Also, electric modulus formalism has been analyzed to obtain the experimental dielectric data. In addition, interfacial polarization can be more easily occurred at the lower frequency and/or with the number of interface state density between Si3N4/Si interface, consequently, contribute to the improvement of dielectric properties of MIS structure..

Keywords

MIS structure; Electrical and dielectric properties; Ac conductivity; Electric modulus.

Submitted at: May 18, 2012
Accepted at: July 19, 2012

Citation

T. ATASEVEN, A. TATAROĞLU, T. MEMMEDLI, S. ÖZÇELIK, Influence of frequency on electrical and dielectric properties of Au/Si3N4/n-Si (MIS) structures, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 7-8, pp. 640-645 (2012)