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FELCY JYOTHI SERRAO1,2,* , S.M. DHARMAPRAKASH1
- Department of studies in Physics, Mangalore University, Mangalagangothri 574199, India
- Department of Physics, Karnataka Government Research Centre SCEM, Mangalore, 575007, India
Gallium (1at% to 5at%) doped zinc oxide films (GZO) with thickness of 348 nm were grown on a glass substrate by sol-gel spin coating method. X-ray diffraction studies reveal that the excessive Ga doping deteriorates the crystallinity of the films. The optical properties were studied using an UV-Vis spectroscopy. All the films showed more than 90% optimal transparency in the entire visible region. The optical transmittance of the films increases with an increase in the Ga doping concentration. A sharp fundamental absorption edge with a slight blue shifting was observed with an increase in Ga doping concentration. In addition, the effect of Ga doping concentration on the band gap and optical constants of the films was investigated. The doping concentration significantly affects the optical constants and Urbach energy values of the films. The largest grain size, the lowest resistivity (2.62×10-3 Ωcm) and the highest figure of merit was achieved for a GZO film at doping concentration 1at%. The new results, obtained from this study indicate that spin coated GZO films have satisfactory optical and electrical properties for the display applications and optoelectronic devices..
Spin coating, GZO thin films, Structural, Optical and electrical.
Submitted at: Sept. 8, 2014
Accepted at: Aug. 3, 2016
FELCY JYOTHI SERRAO, S.M. DHARMAPRAKASH, Influence of Ga dopants on the structural, optical and electrical properties of solution processed ZnO thin films, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 7-8, pp. 672-678 (2016)
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