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Influence of oxygen flow rates on physical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films

B. RAJESH KUMAR1,2,* , T. SUBBA RAO2

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati-517502, A.P, India
  2. Materials Research Lab, Department of Physics, Sri Krishnadevarya University, Anantapur-515003, A.P, India

Abstract

Transparent conducting Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering technique at oxygen flow rates of 1 sccm - 4 sccm. XRD patterns of ZAO thin films exhibit (0 0 2) preferential orientation with the c-axis perpendicular to the substrate and contains compressive stress. SEM images of ZAO thin films show columnar grains perpendicular to the substrate and some granular grains are also exist in the films. The lowest resistivity of 3.48 x 10-4 Ω.cm and a maximum optical transmittance of 90 % are obtained for ZAO film deposited at oxygen flow rate of 3 sccm. The optical direct band gap values of ZAO films increases with the increase of oxygen flow rates..

Keywords

ZAO thin films, DC reactive magnetron sputtering, Structural properties, Electrical properties, Transmittance.

Submitted at: June 2, 2012
Accepted at: Sept. 20, 2012

Citation

B. RAJESH KUMAR, T. SUBBA RAO, Influence of oxygen flow rates on physical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 9-10, pp. 781-786 (2012)