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A. GUERRAOUI1, Z. HADJOUB1, D. NEBTI1, F. Z. KHELIFATI1, A. DOGHMANE1,*
- Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, BP 12, Annaba, DZ-23000, Algérie
In this work, we investigate the effects of photonic intensity on several electrical and structural parameters of GaAs MESETs. First, a simulation software, describing the physical phenomena, is developed to calculate, display and plot the results.This program correctly explains all the behavior of the output conductance under illumination, as a function of polarization, geometrical and structural properties of these devices. Interesting results were obtained: (i) Increasing the photonic intensity and the channel thickness, the gate width and the doping lead to an increase in the output conductance. (ii) Reducing the gate length and the density of surface traps lead to an increase in the output conductance. (iii) Any increase in the illumination intensity optic lead to a progressive decrease in the apparent value of pinch-off voltage under illumination for which a universal equation is deduced in order to predict the apparent blocking voltage of an illuminated MESFET..
GaAs MESET, Output Conductance, Optical controlled, Photo-switching, Pinch-off voltage.
Submitted at: Feb. 11, 2015
Accepted at: Feb. 10, 2016
A. GUERRAOUI, Z. HADJOUB, D. NEBTI, F. Z. KHELIFATI, A. DOGHMANE, Influence of polarization, geometrical and structural parameters on GaAs MESFET output conductance under dark and illuminated conditions, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 82-88 (2016)
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