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Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure

M. CHANDRA SEKHAR1,* , N. NANDA KUMAR REDDY1, S. VICTOR VEDANAYAKAM1, M. RAJA REDDY1, S. UTHANNA2

Affiliation

  1. Department of Physics, Madanapalli Institute of technology and Science, Angallu, Madanapalle, Andhra Pradesh, India
  2. Department of Physics, Sri Venkateswara University, Tirupati, Andhra Pradesh, India

Abstract

Thin films of [(Ta2O5)0.85(TiO2)0.15] were deposited on p-Si (100) substrates by DC reactive magnetron sputtering technique subsequently, the as-deposited films were annealed at various temperatures in the range 873 -1173 K. The composition and core level binding energies of the films were analyzed by XPS. X-ray diffraction results revealed that the as-deposited and the films annealed at 873 K was amorphous, where as the films annealed at ≥ 973 K were transformed to polycrystalline. The as-deposited (Ta2O5)0.85(TiO2)0.15 film (300 nm thick) showed a low leakage current density of 7.7x10-5 A/cm2 at 1.5 V and it was decreased to 1.1x10-6 A/cm2 at 1173 K. The current conduction mechanisms in the (Ta2O5)0.85(TiO2)0.15 films, was compared and correlated with the Poole - Frenkel and Schottky emissions..

Keywords

X-ray diffraction, X-ray photoelectron spectroscopy, Scanning electron microscopy (SEM), Tantalum oxide, Poole-Frenkel and Schottky emissions.

Submitted at: Feb. 6, 2014
Accepted at: Nov. 13, 2014

Citation

M. CHANDRA SEKHAR, N. NANDA KUMAR REDDY, S. VICTOR VEDANAYAKAM, M. RAJA REDDY, S. UTHANNA, Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1295-1299 (2014)