"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Influence of Sn substitution on amorphous to crystalline phase transformation in Ge22Sb22Te56 chalcogenide films

J. KUMAR1,* , R. THANGARAJ2, T. STEPHEN SATHIARAJ3

Affiliation

  1. Department of Physics, Arni University, Kangra, Himachal Pradesh, India
  2. Department of Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
  3. Department of Physics, University of Botswana, Botswana

Abstract

The effect of Sn substitution on phase transformation in Ge22Sb22Te56 (GST) chalcogenide system has been studied. Partial substitution of Sn upto 4 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Sn (i.e. ~ 6 at %) the films were found to exhibit decreased phase transformation temperature. Optical study does not show any considerable change in optical band gap for Sn 2 and 4 at%. XRD investigation of annealed samples revealed that Sn substitution retains NaCl type crystalline structure of GST..

Keywords

Ge-Sb-Te, Sn doping, Thin film, Chalcogenide phase transformation.

Submitted at: Oct. 17, 2011
Accepted at: June 6, 2012

Citation

J. KUMAR, R. THANGARAJ, T. STEPHEN SATHIARAJ, Influence of Sn substitution on amorphous to crystalline phase transformation in Ge22Sb22Te56 chalcogenide films, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 5-6, pp. 455-459 (2012)