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Influence of sputtering pressure on the properties of NiO films prepared by dc reactive magnetron sputtering

A. MALLIKARJUNA REDDY1,2,* , SEUNG KI JOO2, A. SIVASANKAR REDDY3, P. SREEDHARA REDDY1

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati 517502, India
  2. Research Institute of Advanced Materials, Department of Material Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea
  3. Division of Advanced Materials Engineering, Kongju National University, Cheonan City, Republic of Korea

Abstract

The effect of sputtering pressure on the properties of dc reactive magnetron sputtered nickel oxide thin films was discussed in the present paper. The structural, morphological, compositional, optical and electrical properties of the deposited films were influenced by sputtering pressure. From X-ray diffractometer studies, it was observed that films were preferentially grown along (220) reflection. The films exhibited wide direct optical band gap of 3.82 eV with transmittance of 60% at the sputtering pressure of 4 Pa. Hall effect measurements showed that all films exhibited p-type conductivity and the electrical resistivity decreases with increasing the sputtering pressure up to 4 Pa, thereafter increased with sputtering pressure..

Keywords

Magnetron sputtering, Sputtering pressure, X-ray diffraction, Surface morphology, Optical properties, Electrical properties.

Submitted at: May 16, 2012
Accepted at: Sept. 20, 2012

Citation

A. MALLIKARJUNA REDDY, SEUNG KI JOO, A. SIVASANKAR REDDY, P. SREEDHARA REDDY, Influence of sputtering pressure on the properties of NiO films prepared by dc reactive magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 9-10, pp. 763-768 (2012)