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Influence of temperature, thickness and intensity of illumination on the capacitance-voltage and currentvoltage characteristics of coplanar ZnTe thin f

A. A. M. FARAG1, I. S. YAHIA2,3,* , E. G. EL-METWALLY2

Affiliation

  1. Thin Film Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
  2. Semiconductor Lab., Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
  3. Semimagnetic Semiconductors lab., Institute of Physics, Polish Academy of Sciences, Al. Lotnikow, 32/46, 02-668 Warszawa, Poland

Abstract

This paper examines the influence of temperature, thickness and illumination of different intensities on the capacitancevoltage (C-V) and current-voltage (I-V) characteristics of coplanar ZnTe thin films of thickness range (300-700 nm). Capacitance–voltage (C-V) measurements of ZnTe thin films were performed by a sweep of voltages from -10 to +10 V at different elevated temperatures in the range 298-398 K. The temperature dependence of the measured capacitance for the different applied voltage was studied. The dependence of capacitance on the reciprocal of film thickness, yields a permittivity value of ZnTe, assuming that the capacitance follows a simple parallel plate relationship. The current-voltage (IV) characteristics of ZnTe films at room temperature (RT) for different thicknesses showed the Ohmic conduction mechanism at low voltages, while at higher voltages, the trap-charge-limited conduction (TCLC) was dominant. The temperature dependence of current allows the determination of some essential parameters of ZnTe. Discussion of the obtained results and their comparison with the previously published data are also given..

Keywords

II-VI compound, ZnTe, thermal evaporation, Thin film, coplanar device, I-V and C-V characteristics, effect of temperature, thickness and intensity of illumination.

Submitted at: Sept. 14, 2008
Accepted at: Feb. 24, 2009

Citation

A. A. M. FARAG, I. S. YAHIA, E. G. EL-METWALLY, Influence of temperature, thickness and intensity of illumination on the capacitance-voltage and currentvoltage characteristics of coplanar ZnTe thin f, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 2, pp. 204-212 (2009)