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M. JIGAU1, M. OSIAC1,* , G. E. IACOBESCU1
- University of Craiova, Department of Physics, Street A.I. Cuza no. 13, Craiova 200585, Romania
In this study the Ge1Sb2Te4 thin film has been deposited by pulsed laser deposition. The X-ray diffraction (XRD) was applied to show crystallization as deposited and annealed films. The change of film roughness and the topography of annealed films have been determined by Atomic Force Microscopy (AFM). The phonon modes of film were identified using Raman spectroscopy. It was observed that while increasing the temperature, the modes of vibration in the Raman spectra became more clearly defined, indicating good film crystallization. The qualitative chemical composition of Ge1Sb2Te4 thin film measured by EDX presented the stoichiometry of thin film..
Pulsed laser deposition, Thin film, Chalcogenide GeSbTe.
Submitted at: Aug. 17, 2016
Accepted at: June 7, 2017
M. JIGAU, M. OSIAC, G. E. IACOBESCU, Influence of the annealing temperature on Ge1Sb2Te4 thin film prepared by pulsed laser deposition, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 5-6, pp. 395-399 (2017)
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