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Influence of thickness on properties of YbxCo4Sb12 layers prepared by laser ablation

R. ZEIPL1,* , M. JELÍNEK2,3, J. NAVRÁTIL4, T. KOCOUREK2,3, R. YATSKIV1, M. JOSIEKOVÁ1, S. LESHKOV1, K. JUREK2, J. WALACHOVÁ1

Affiliation

  1. Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, v. v. i., Chaberská 57, 18251 Prague, Czech Republic
  2. Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Na Slovance 2, 18221 Prague, Czech Republic
  3. Czech Technical University, Faculty of Biomedical Engineering, Sitna 3105, 27201 Kladno, Czech Republic
  4. Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, v. v. i., Heyrvskeho nam. 2, 162 06 Prague, Czech Republic

Abstract

In this paper we contribute to the understanding of thickness dependence of thermoelectric properties of YbxCo4Sb12 layers. The YbxCo4Sb12 layers were prepared by Pulsed Laser Deposition at substrate temperature Ts=250 °C applying laser beam energy density Ds=3 J/cm2 . The thermoelectric properties such as the Seebeck coefficient, the electrical resistivity and the power factor of thin layers were studied at temperatures ranging from 300 K to 500 K. Depending on the layer thickness, an oscillatory behavior (with a period of about 10 nm) of the thermoelectric properties was observed. Room temperature measurements of carrier concentration and mobility show oscillations as well. The influence of a corundum cap layer (15 nm in thickness) on the thermoelectric properties is also reported. The aim of the presented work is to improve our knowledge and technology of future thermoelectric thin layer devices..

Keywords

Thermoelectrics, Thin layers, Skutterudites.

Submitted at: June 18, 2009
Accepted at: Feb. 27, 2010

Citation

R. ZEIPL, M. JELÍNEK, J. NAVRÁTIL, T. KOCOUREK, R. YATSKIV, M. JOSIEKOVÁ, S. LESHKOV, K. JUREK, J. WALACHOVÁ, Influence of thickness on properties of YbxCo4Sb12 layers prepared by laser ablation, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 572-575 (2010)