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Influence of Yb AND Yb2O3 addition on the properties of InP layers

O. PROCHÁZKOVÁ1,* , J. GRYM1, J. ZAVADIL1, J. LORINČÍK1, K. ZDÁNSKÝ1

Affiliation

  1. Institute of Photonics and Electronics, ASCR, v.v.i. Chaberska 57, 182 51 Praha 8, Czech Republic

Abstract

The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n→p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n→p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity..

Keywords

Semiconductors, InP, Rare earth elements, Yb, SIMS, Photoluminiscence.

Submitted at: Sept. 20, 2008
Accepted at: Dec. 10, 2008

Citation

O. PROCHÁZKOVÁ, J. GRYM, J. ZAVADIL, J. LORINČÍK, K. ZDÁNSKÝ, Influence of Yb AND Yb2O3 addition on the properties of InP layers, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 12, pp. 3261-3264 (2008)