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Influences of copper and manganese concentrations on the properties of polycrystalline ZnS:Cu and ZnS:Mn thin films

F. GÖDE1,* , C. GÜMÜŞ2

Affiliation

  1. Physics Department, University of Mehmet Akif Ersoy15030 Burdur, Turkey
  2. Physics Department, University of Çukurova 01330 Adana, Turkey

Abstract

Copper and manganese doped zinc sulfide (ZnS:Cu and ZnS:Mn) thin films are deposited on glass substrates using chemical bath deposition (CBD) method, with the both copper and manganese concentration varying from 0.5 to 4 mol%. All films were annealed in the temperature range of 100-500 ºC and characterized by X-ray diffraction (XRD) and optical absorption. All samples are shown to be crystallized in the hexagonal phase of ZnS with a preferential orientation in the (008) direction. The XRD analysis showed that after annealing process, ZnS:Cu and ZnS:Mn films can be converted to ZnO:Cu and ZnO:Mn films at annealing temperature of 300 ºC. The electrical conductivity measurments were taken in the dark before and after annealing temperature of 400 ºC for 1 h. The electrical conductivity of ZnS:Cu films decreased after annealing process. However, it increased for ZnS:Mn thin films. The activation energy values were obtained using the temperature-dependent current measurements in the range of 300-623 K..

Keywords

ZnS:Cu, ZnS:Mn, Thin films, XRD, Optical absorption.

Submitted at: Jan. 15, 2009
Accepted at: April 28, 2009

Citation

F. GÖDE, C. GÜMÜŞ, Influences of copper and manganese concentrations on the properties of polycrystalline ZnS:Cu and ZnS:Mn thin films, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 429-436 (2009)