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Influencing factors in the laser induced damage threshold of Ta2O5 films prepared with different methods

C. XU1,* , D. LIN1, P. FENG1, D. LI2, H. FAN1, J. QI1, J. NIU1, Y. QIANG1


  1. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China
  2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China


Ta2O5 films were prepared by electron beam evaporation ( EBE), ion beam sputtering ( and sol gel methods, respectively. It show ed that both the refractive indices and the surface roughness of the films were very relevant to the preparation methods. The laser induced damaged threshold (LIDT) at 1064 nm and 12 ns of the EBE, IBS and sol gel films was 8.3, 14.4 and 19.6 J /cm 2 , Although the damage of all the films wa s initiated from defects, t he EBE and IBS film s present ed the thermal melt damage feature , whereas the sol gel film show ed the damage feature of interaction between thermal melt and stress. T he imp urity defect s and structural defect s were the main influencing factors in the LIDT of the EBE and IBS films . For the sol gel film, not only the defect but also the special structure affected the laser damage resistance. The highest LIDT achieved by the sol gel film was attributed to the least defects and the network structure..


Ta2O5 films ; Laser damage Defects ; Absorption.

Submitted at: Sept. 14, 2015
Accepted at: Oct. 28, 2015


C. XU, D. LIN, P. FENG, D. LI, H. FAN, J. QI, J. NIU, Y. QIANG, Influencing factors in the laser induced damage threshold of Ta2O5 films prepared with different methods, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 11-12, pp. 1739-1746 (2015)