"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching

NAISEN YU1,* , XUELIANG ZHU2, MINGZENG PENG2, ZHIGANG XING2, JUNMING ZHOU2

Affiliation

  1. a Institute of Optoelectronic Technology, School of Mathematics and Physics Dalian Nationalities University, Dalian 116600, China
  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Abstract

InGaN/GaN multiple quantum well (MQW) green and near ultraviolet (UV) light-emitting diodes (LEDs) were grown on maskless periodically grooved (MPG) sapphire by metal organic vapor phase epitaxy (MOCVD). The LEDs grown on MPG sapphire show better crystalline quality compared with those grown on planar sapphire. Meanwhile, the light output for LEDs grown on MPG sapphire show higher than those grown on planar sapphire. The improvement in the light intensity for green LED could be attributed to the enhancing external quantum efficiency (EQE) by adopting MPG sapphire. For UV LED grown on MPG sapphire, the enhancement is due to the combination of increasing internal quantum efficiency (IQE) by reducing threading dislocations and improving light extraction efficiency. The results show that the method adopting MPG sapphire will have potential application to develop high quality LEDs, especially in UV LEDs..

Keywords

InGaN/GaN based LEDs, Maskless periodically grooved sapphire, MOCVD.

Submitted at: March 17, 2011
Accepted at: Oct. 20, 2011

Citation

NAISEN YU, XUELIANG ZHU, MINGZENG PENG, ZHIGANG XING, JUNMING ZHOU, InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by wet chemical etching, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 10, pp. 1203-1207 (2011)