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Interference lithography using chalcogenide inorganic photoresist

I. Z. INDUTNYY1,* , M. POPESCU2, A. LŐRINCZI2, F. SAVA2, V. I. MIN’KO1, P. E. SHEPELIAVYI1

Affiliation

  1. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, Prospect Nauky, 03028 Kyiv, Ukraine
  2. National Institute of Materials Physics, P.O. Box MG. 7, 105 bis Atomistilor st., 077125 Magurele, Romania

Abstract

There was investigated the application of inorganic photo-resist based on three-component chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers using interference lithography. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of diffraction gratings and two-dimensional periodic structures on Si (100) surface. The obtained relief patterns were used to form photonic structures by oblique deposition of silicon monoxide in vacuum..

Keywords

Chalcogenide inorganic photoresist, Interference lithography, Diffraction.

Submitted at: Oct. 28, 2008
Accepted at: Dec. 10, 2008

Citation

I. Z. INDUTNYY, M. POPESCU, A. LŐRINCZI, F. SAVA, V. I. MIN’KO, P. E. SHEPELIAVYI, Interference lithography using chalcogenide inorganic photoresist, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 12, pp. 3188-3192 (2008)