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Investigation of a p-CuO/n-TiO2 thin film heterojunction fabricated by the sol-gel process

N. YILDIRIM1,* , T. SERIN1, N. SERIN1

Affiliation

  1. Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Tandoğan, Ankara, Turkey.

Abstract

The p-CuO/n-TiO2 thin film heterojunction is fabricated by the sol-gel technique on the glass substrate coated ATO (antimony doped tin oxide). The crystallinity of the junction materials is examined by an x-ray diffractometer (XRD). The electrical characterizations of the p-CuO/n-TiO2 heterojunction were measured by means of the current–voltage and capacitance-voltage measurements at room temperature. It was observed that the junction between p-CuO and n-TiO2 was rectifying. It was determined that the ratio of forward current to the reverse current was about 139.9 at 1.5 V and the diode ideality factor was much greater than 2. The forward turn-on voltages were about 0.5 V. In order to analyze the electrical properties an energy-band diagram was proposed, it was deduced from the current–voltage measurements that the turn-on voltages were smaller than the barrier potentials which exhibited the existence of the interface defect states. The mechanism of charge transportation was discussed and a tunnel recombination process was proposed to explain its electrical properties..

Keywords

TiO2, CuO, Sol-gel, Heterojunction.

Submitted at: April 10, 2010
Accepted at: May 26, 2010

Citation

N. YILDIRIM, T. SERIN, N. SERIN, Investigation of a p-CuO/n-TiO2 thin film heterojunction fabricated by the sol-gel process, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1153-1156 (2010)