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Investigation of anti-reflective silicon nitride (Si3N4) thin film: A CVD technique

M. GEETHA1, R.S. DUBEY2, S. SARAVANAN3,*

Affiliation

  1. Department of Physics(S&H), R P Sarathy Institute of Technology, Salem (TN)- 636 305, India
  2. Department of CS&AI, SR University, Warangal, Telangana, India
  3. Department of Physics (S&H), Swarnandhra College of Engineering and Technology (A),Seetharampuram, Narsapur-534280, West Godavari (AP), India

Abstract

In this work, the fabrication of Si3N4 thin films using the chemical vapor deposition technique. The fabricated Si_3 N_4thin film investigated their reflectance, structural, functional, and topographical properties usingvariouscharacterization techniques. UV-visible spectra are evidencing the successful and improvement of anti-reflection coating properties at nanoscale engineering by reporting the lowest reflection (15%). XRD pattern revealed the sharp diffraction peaks and confirmed the presence of crystalline and α-Si_3 N_4phases. Furthermore, 3D- AFM topographyhadshownthesample surface area of the scanning surface of 1x1µm2. These topography results are including thin film in the heights of 25, 4.2, and 24.2 nm with the corresponding surface area ratios of 2.8, 2.2, and 2.3%. Overall, the obtained properties are well-suited and useful in thin film solar cells as better anti-reflection coating to reduce the reflection of incoming light and could be boost the absorption of incoming photons by harvesting mechanism..

Keywords

Thin film, CVD, Si3N4, XRD, AFM, ARC.

Submitted at: Aug. 21, 2024
Accepted at: Aug. 5, 2025

Citation

M. GEETHA, R.S. DUBEY, S. SARAVANAN, Investigation of anti-reflective silicon nitride (Si3N4) thin film: A CVD technique, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 7-8, pp. 326-333 (2025)