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JIANFENG SU1,* , QIANG NIU1, RUIRUI SUN1, XIUYUN AN1, YONGSHENG ZHANG1
- Department of mathematics and Physics, Luoyang institute of science and technology, Luoyang 471023, PR China
High purity Cu2O films were obtained under room temperature by using Cu2O target. The thickness of Cu2O films increased from 376 nm to 1110 nm when the RF power was varied. A band gap narrowing was observed which caused by the increase of film’s thickness, and the value was 2.18-2.10 eV. From PL spectra, it can be seen that all samples have a very strong peak located at ~618 nm which was attributed to the radiative recombination of band excitons. A weak broaden peak located at ~750 nm was also observed in some samples and it has been considered deriving from the defect of VO.
Cu2O, Sputtering, Transmittance, Photoluminescence.
Submitted at: Nov. 27, 2017
Accepted at: Aug. 9, 2018
JIANFENG SU, QIANG NIU, RUIRUI SUN, XIUYUN AN, YONGSHENG ZHANG, Investigation of Cu2O films sputtered with ceramic target: effect of RF power, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 7-8, pp. 441-444 (2018)
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