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FARZANEH KARIMINEZHAD1, ESFANDIAR RAJAEI1
- Department of Physics, University of Guilan, Rasht, Iran
A theoretical analysis of the high-speed characteristics of InGaAs/GaAs quantum dot (QD) lasers is presented. Both the ground and excited states small signal frequency responses are obtained by analysing small signal modulation. The rate equations for the electrons, holes and photons are solved numerically using the fourth-order Runge-Kutta method. The effect of relaxation time on light – current characteristics is presented. Modulation response and 3-dB modulation bandwidth in various injected current densities, capture times and laser cavity lengths are investigated. Some analytical expressions are derived that indicate the relationship between these characteristics and modulation bandwidth. The present results show how the dynamics of electrons and holes improve the excited state lasing and high-speed modulation of laser..
InGaAs/GaAs quantum dot laser, Small signal modulation, Modulation frequency response.
Submitted at: Feb. 20, 2015
Accepted at: June 9, 2016
FARZANEH KARIMINEZHAD, ESFANDIAR RAJAEI, Investigation of modulation characteristics of high speed InGaAs/GaAs double state lasing quantum dot lasers, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 5-6, pp. 480-489 (2016)
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