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Investigation of optical and thermo-electrical properties of the sulfosalt SnSb2S4 thin films

A. GASSOUMI1,* , M. KANZARI1

Affiliation

  1. Photovoltaic and Semiconductors Materials.-National Engineering School of Tunis (ENIT), BP 37, Le belvédère 1002- Tunis, Tunisie

Abstract

SnSb2S4 films were grown with different thicknesses, they subsequently thermally annealed under air atmospheres from the ambient temperature to 275 °C. The SnSb2S4 films exhibit a polycrystalline structure and undergo drastically changes in electrical and optical properties at a transition temperature of about 150°C only for the films with thicknesses lower than 600 nm. The films show an hysteresis-like loop on accomplishing measurements of the square resistance values for the films with thicknesses higher than 600 nm. So, for the lower thicknesses this material is a good candidate as a protective material for example against high energetic laser radiation..

Keywords

SnSb2S4 thin films, X-ray diffraction, Surface morphology, Optical properties, Electrical properties.

Submitted at: April 25, 2010
Accepted at: May 26, 2010

Citation

A. GASSOUMI, M. KANZARI, Investigation of optical and thermo-electrical properties of the sulfosalt SnSb2S4 thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1052-1057 (2010)