"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Investigation of the crystallization kinetics in Ge-Sb-TeBi and Ge-Sb-Te-In phase-change memory materials

A. BABICH1, A. SHERCHENKOV1, S. KOZYUKHIN2,3, P. LAZARENKO1, S. TIMOSHENKOV1, O. BOYTSOVA2

Affiliation

  1. National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia
  2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Pr., 31, Moscow, 119991, Russia
  3. National Research Tomsk State University, 36, Lenina Av., Tomsk, 634050, Russia

Abstract

In this work crystallization kinetics for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. Introduction of Bi and In influences the thermal properties and crystallization process of Ge2Sb2Te5, and its kinetic parameters can be varied in wide range. It was shown that PCM cell based on Ge2Sb2Te5+0.5 wt. % Bi can have minimum data processing and maximum data storage times in comparison with the other investigated materials..

Keywords

Chalcogenide materials, Phase change memory, Ge2Sb2Te5, Doping, Bi, In.

Submitted at: Nov. 5, 2015
Accepted at: April 5, 2016

Citation

A. BABICH, A. SHERCHENKOV, S. KOZYUKHIN, P. LAZARENKO, S. TIMOSHENKOV, O. BOYTSOVA, Investigation of the crystallization kinetics in Ge-Sb-TeBi and Ge-Sb-Te-In phase-change memory materials, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 3-4, pp. 235-239 (2016)