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A. BABICH1, A. SHERCHENKOV1, S. KOZYUKHIN2,3, P. LAZARENKO1, S. TIMOSHENKOV1, O. BOYTSOVA2
- National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia
- Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Pr., 31, Moscow, 119991, Russia
- National Research Tomsk State University, 36, Lenina Av., Tomsk, 634050, Russia
In this work crystallization kinetics for thin films on the basis of Ge-Sb-Te-Bi and Ge-Sb-Te-In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. Introduction of Bi and In influences the thermal properties and crystallization process of Ge2Sb2Te5, and its kinetic parameters can be varied in wide range. It was shown that PCM cell based on Ge2Sb2Te5+0.5 wt. % Bi can have minimum data processing and maximum data storage times in comparison with the other investigated materials..
Chalcogenide materials, Phase change memory, Ge2Sb2Te5, Doping, Bi, In.
Submitted at: Nov. 5, 2015
Accepted at: April 5, 2016
A. BABICH, A. SHERCHENKOV, S. KOZYUKHIN, P. LAZARENKO, S. TIMOSHENKOV, O. BOYTSOVA, Investigation of the crystallization kinetics in Ge-Sb-TeBi and Ge-Sb-Te-In phase-change memory materials, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 3-4, pp. 235-239 (2016)
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